O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Com.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junctio.

AUIRF1010EZ

AUIRF1010EZS

AUIRF1010Z

AUIRF1010ZL

AUIRF1010ZS

AUIRF1324

AUIRF1324L

AUIRF1324S

AUIRF1324S-7P

AUIRF1324WL

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